| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| K9F1G08Q0M-PCB0 K9F1G08Q0M-PIB0 K9F1G08Q0M-YCB0 K9 |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
1Gb Gb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| SSM3J325F |
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS??
|
Toshiba Semiconductor
|
| MP4403 |
TOSHIBA POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
| SSM3J133TU |
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS?
|
Toshiba Semiconductor
|
| TPC8113 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Corporation
|
| TPC8209 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
|
Toshiba Semiconductor
|
| TPCS8105 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation
Toshiba, Corp.
|
| TPCF8001 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC8014 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
| TPC8210 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
|
Toshiba Semiconductor
|
